제주대학교 Repository

Deposit zinc oxide thin film at atmospheric pressure using dielectric barrier discharge.

Metadata Downloads
Author(s)
무하마드 라기브 만수르
Issued Date
2009
URI
http://dcoll.jejunu.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000004700
Abstract
Zinc oxide (ZnO) is a widely applied material in industry and technically important due to its wide range of optical and electrical properties. Recent years different techniques have already been adopted to deposit it include chemical vapor deposition, plasma enhanced chemical vapor deposition (PECVD), pulsed laser deposition, ion beam sputtering, magnetron sputtering, spray pyrolysis etc. In our lab DC arc plasmatron [10] has been designed and used for several purposes including ZnO deposition at atmospheric condition. The main objective of my experiment is to use dielectric barrier discharge to excite the ZnO vapor and observe the deposition occurred on the silicon substrates. Three different dielectric barrier discharge configurations have been developed to achieve deposition. In the experiment deposition of ZnO thin films on Silicon wafer has been done by using coaxial, parallel plate and disk plate type dielectric barrier discharge at atmospheric pressure. The deposition process depends on physical and chemical interactions in the plasma, frequency, power, gas pressure & composition, the magnitude and the pattern of the gas flow and electrode geometry. As electrode geometry has great impact on non-thermal plasma the main objective of the experiment is to apply different electrode configurations with different gaps & electrode geometry and observe the impact on ZnO deposition. X-ray photoelectron spectroscopy (XPS) has been used to reveal the presence of ZnO on the substrate, FESEM for surface observation. Optical Emission spectroscopy has been used to determine different element & ion species present at the different environment which could affect the deposition.


Keywords: Dielectric barrier discharge, zinc oxide, silicon wafer, atmospheric pressure, silicon wafer, non-thermal plasma.
Alternative Title
Deposit zinc oxide thin film at atmospheric pressure using dielectric barrier discharge.
Affiliation
제주대학교 대학원
Department
대학원 에너지공학과
Advisor
이헌주
Awarded Date
2009. 8
Table Of Contents
요약문 13
ABSTRACT 14

1 INTRODUCTIN 15

2 RELATED THEORY
2.1 Plasma and processing 16
2.2 Evaporation process 16
2.3 Gas discharge 18
2.4 Corona spark and arc 21
2.5 Low temperature non thermal plasma (Dielectric barrier discharge) 21
2.6 Source of energy to release electron 25
2.7 Reactions inside plasma 26
2.8 Plasma Surface interaction 28
2.9 Optical Emission 29

3 EXPERIMENTAL DETAIL
3.1 Experimental configurations 30
3.2 Parallel plate configuration 30
3.3 Coaxial plate configuration 32
3.4 Disk plate configuration 33
3.5 Equipments used for the measurement 34

4 RESULT AND DISCUSSION
4.1 Optical Emission Spectroscopy of non thermal plasm 35
4.2 Surface analysis of deposited samples 37
4.3 Surface topography of deposited ZnO thin film 38
4.4 Voltage and current characteristic 39
4.5 Relation between Frequency and breakdown voltage 40
4.6 Dependence of deposition thickness on electrode gap 42

5 SUMMARY AND CONCLUSION 43
5.1 Summary 43
5.2 Conclusion 43
5.3 Future work 44

6 REFERENCE 45
Degree
Master
Publisher
제주대학교 대학원
Citation
무하마드 라기브 만수르. (2009). Deposit zinc oxide thin film at atmospheric pressure using dielectric barrier discharge.
Type
Dissertation
Appears in Collections:
Faculty of Applied Energy System > Energy and Chemical Engineering
Authorize & License
  • AuthorizeOpen
Files in This Item:

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.