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자외선 조사에 따른 SiOC(-H) 박막의 전기적 특성

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Abstract
The research work is focused on exploring the bonding structure and the electrical property of the SiOC(-H) thin films. These films were deposited by plasma-enhanced chemical-vapor deposition (PECVD) using the TriMethylSilan (TMS: H-Si-(CH3)3) and oxygen gas with various deposition conditions.
The SiOC(-H) films were characterized with ultraviolet (UV) treatment effect in terms of the treatment time and annealing temperature. Film thickness is measured by field emission scanning electron microscopy (FESEM). Bonding configurations of Si-O-Si, Si-O-C, Si-CH3 and OH-related bonds in the SiOC(-H) films were investigated by Fourier transform infrared (FTIR) spectroscopy. The electric properties including the capacitance-voltage (C-V) characteristics were investigated using the Al/SiOC(-H)/p-Si(100) metal-insulator-semiconductor (MIS) structure.
The deposition rates of the SiOC(-H) films were increased as the flow rate ratio increased. The relative absorption areas of the Si-O-Si network and Si-O-C open-linked mode were decreased as the UV treatment time and annealing temperature increased. On the other hand, the Si-O-C cage-linked and Si-O-C ring-linked modes were increased as the UV treatment time and annealing temperature increased.
The dielectric constant of SiOC(-H) films decreased with increasing the UV treatment time and the annealing temperature. For the UV treatment time of 5 min, the dielectric constant was varied from 2.49 to 2.29 as the annealing temperature increased from room temperature (RT) to 400 ℃. At annealing temperature 400 ℃, the dielectric constant varied from 2.50 to 2.05 as the UV treatment time increased from 0 to 8 min.
Author(s)
이행석
Issued Date
2011
Type
Dissertation
URI
http://dcoll.jejunu.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000005340
Alternative Author(s)
Lee, Heang-Seuk
Affiliation
제주대학교
Department
대학원 물리학과
Advisor
최치규
Table Of Contents
List of Figures ⅲ
List of Table ⅵ
SUMMARY ⅶ

Ⅰ. 서론 1

Ⅱ. 이론 3
1. RC에 의한 신호지연 3
2. 전력소모 7
3. 분극현상 8

Ⅲ. 실험 및 방법 11
1. PECVD 장치구성 11
2. SiOC(-H) 박막형성 11
3. 박막의 특성 분석 16
1) SiOC(-H) 박막의 화학적 결합 구조 분석 16
2) 두께 측정 16
3) SiOC(-H) 박막의 전기적 특성 분석 16

Ⅳ. 결과 및 고찰 17
1. 유량비에 따른 SiOC(-H) 박막의 결합구조 분석 17
2. 열처리 온도에 따른 SiOC(-H) 박막의 결합구조 분석 25
1) 화학적 결합구조 분석 25
2) 전기적 특성 분석 31
3. 자외선 조사 시간에 따른 SiOC(-H) 박막의 분석 35
1) 화학적 결합구조 분석 35
2) 전기적 특성 분석 40

Ⅴ. 결론 44

참고문헌 46
Degree
Master
Publisher
제주대학교 대학원
Citation
이행석. (2011). 자외선 조사에 따른 SiOC(-H) 박막의 전기적 특성
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Faculty of Applied Energy System > Physics
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