Formation of graphene flowers for field enhancement and its applications for low-voltage operation of ferroelectric polymer memory devices

Abstract

As an emerging area in organic electronics, polymer memories have become an active research topic in recent years, because they are likely to be an alternative or supplementary technology to the conventional memory technology facing the problems and challenges in miniaturizing from microscale to nanoscale. Here we propose the device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/graphene/metal type capacitor with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoro ethylene (TrFE). Different solution processing methods were used for the growth of graphene flowers film over silicon and gold coated silicon. Using these different fabrication techniques, we observed density, uniform dispersion of graphene nano particles. Moreover, detailed morphological studies were carried out by SEM to check the spreading density and uniformity of graphene flowers on various substrates. The physical properties of graphene flowers coated on various substrates were investigated by Raman spectroscopy. A comparative study was performed with already reported results by Lin Li et al., to demonstrate efficiency of our proposed device architecture to minimize operating voltage of polymer memory. So, by comparing our obtained sample morphology with their graphene floral structure, it almost most looks similar with even more sharp edges than their sample. Hence, can say that our grown graphene flowers are efficient enough for the high field emission required for polarization reversal of polymer memory device at low voltage operation