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Smart Sensors and Neuromorphic Resistive Memory Devices for Intelligent Wearable Electronics

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Abstract
Recently there has been a growing interest in the realization of smart sensors and neuromorphic resistive memory devices by process from the field of printed electronics with low cost, and high-throughput printing techniques. These devices can easily by integrated and interfaced with a Human-machine interface (HMI) and have the potential to revolutionize the spread of electronic applications. Printed Electronics has emerged as one of the most promising alternative manufacturing technologies because of its ambient manufacturing processing. This thesis focuses on the fabrication of Printed, flexible, and stretchable electronic devices by utilization of printed techniques. Materials are synthesized to make them printable through printed techniques for the realization of electronic devices and circuits. The printed techniques used in device manufacturing are Spray Coating, Inkjet material printing, Screen Printing, and spin coating. In this work, I have used different substrates according to to the manufacturing process requirement in the glass substrate and flexible and stretchable substrate. The main substrates utilized in the fabrication of devices are glass, PDMS, PET, and biomaterials. The fabricated devices were characterized against their electrical, mechanical, optical, and chemical behavior to verify the device fabrication approach and performance.
Resistive random-access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, and are currently considered to be one of the next-generation alternatives to traditional memory. I have fabricated different memristors based on device structure ITO/ZnO/Fe2O3/Ag to solve sneak current problem in a crossbar array and soft and flexible resistive memory device Cu/(PAA-Na+:H2O): (NaOH)/Cu to improve retention time, on/off ratio and endurance cycles.
Neuromorphic computing has emerged as a promising avenue towards building the next generation of intelligent computing systems. It has been proposed that memristive devices, which exhibit history-dependent conductivity modulation, could efficiently represent the synaptic weights in artificial neural networks. I have fabricated solid-state and liquid-based neuromorphic computing resistive memory devices. The solid-state structure is based on structure ITO/ZnO/GaN/Ag and ITO/GeO2/Ag are fabricated using spin coating and RF sputtering technology. These works show the memory importance to block sneak current in a crossbar array. At the same time, Neuromorphic behavior has been explored to show its importance to implement hardware-based artificial intelligence systems. On the other hand, soft and liquid-based neuromorphic resistive memory devices are emerging field, which helps to open a gateway for soft circuits. To introduce a simple device structure to perform neuromorphic computing we fabricated a discrete channel device, which helps to improve our understanding of soft neuromorphic computing devices using structure Cu/BMIM FeCl4: H2O/Cu. The large-scale integration of soft memory devices can be enabled by introducing soft and flexible device structures in a crossbar array structure Cu/Ag@AgCl/Cu. These results open a gateway for the implementation of soft and flexible brain-like miking systems.
Several types of printed devices are fabricated and discussed in this thesis includes: Humidity Sensor, Piezo, and Triboelectric Nanogenerator, and its stretchability achieved up to 54.5%. To measure humidity in a wide range with high sensitivity, inkjet printing, Screen-printing, and spin coating technique are utilized to fabricate humidity sensor, which helps to monitor real-time humidity applications using inner eggshell membrane, and GaN. The snake shad is used to fabricate the Piezoelectric and Triboelectric nanogenerator for energy harvesting to power electronic devices. Inkjet-printed self-healable strain sensor based on Graphene and Magnetic Iron Oxide on polyurethane substrate. The prototype of printed electronic devices and circuits fabricated by utilizing solution-processed materials are good achievements and a way to future printed flexible and stretchable electronics.
Author(s)
Khan, Muhammad Umair
Issued Date
2022
Awarded Date
2022-02
Type
Dissertation
URI
https://dcoll.jejunu.ac.kr/common/orgView/000000010576
Alternative Author(s)
칸 무하마드 우마이르
Affiliation
제주대학교 대학원
Department
대학원 지구해양융합학부
Advisor
배진호
Table Of Contents
Abstract. xvi
Chapter 1 Introduction. 1
1.1 Printed of Electronics. 1
1.2 Technologies Utilized for Device Fabrications. 3
1.2.1. Inkjet Printing. 4
1.2.2. Screen Printing. 4
1.2.3. Spin Coating. 5
1.3 Objective of the Thesis. 6
1.3.1. Outline of Thesis. 6
Chapter 2 Memristors. 8
2.1 Memristor. 8
2.2 Types of Memristors. 9
2.2.1 Unipolar Memristors. 9
2.2.2 Bipolar Memristors. 10
2.3 Memristors Mechanisms. 11
2.3.1 Bulk Effect. 11
2.3.2 Interface Effect. 11
2.3.3 Redox Process Induced Cation Migration. 11
2.3.4 Redox Process induced Anion Migration. 12
2.3.5 Formation and Disruption of Metal Oxide. 12
2.4 Asymmetric Resistive Switching Memory based on ZnO/Fe2O3 Heterojunction. 12
2.4.1 Materials and Methods. 14
2.4.2 Characterization. 15
2.4.3 Result and Discussion. 19
2.4.4 Summary. 23
2.5 Soft Ionic Liquid Based Resistive Memory in a Cylindrical Channel. 23
2.5.1 Materials and Methods. 24
2.5.2 Result and Discussion. 25
2.5.3 Summary. 30
Chapter 3 Neuromorphic Resistive Memories. 31
3.1 Introduction. 31
3.2 One Directional Engineered GaN Resistive Memory Device for Electronic Synapses. 31
3.2.1 Materials and Methods. 33
3.2.2 Characterization. 34
3.2.3 Result and Discussion. 36
3.2.4 Summary. 44
3.3 Multistate Resistive Memory Device based on Ge2O3 for Electronic Synapses. 44
3.3.1 Materials and Methods. 46
3.3.2 Characterization. 46
3.3.3 Result and Discussion. 48
3.3.4 Summary. 54
3.4 Ionic Liquid Multistate Resistive Switching Device for Neuromorphic Computing. 54
3.4.1 Materials and Methods. 55
3.4.2 Characterization. 56
3.4.3 Result and Discussion. 58
3.4.4 Summary. 62
3.5 Soft and Flexible: Core-shell Ionic Liquid Resistive Memory for Electronic Synapses. 63
3.5.1 Materials and Methods. 65
3.5.2 Characterization. 65
3.5.3 Result and Discussion. 67
3.5.4 Summary. 75
Chapter 4 Sensors. 76
4.1 Biocompatible Organic Humidity Sensor Based on Natural Inner Eggshell Membrane. 76
4.1.1 Materials and Methods. 78
4.1.2 Characterization. 79
4.1.3 Result and Discussion. 82
4.1.4 Summary. 89
4.2 Printable Highly Stable and Superfast Humidity Sensor Based on 2D MoSe2. 89
4.2.1 Materials and Methods. 91
4.2.2 Characterization. 92
4.2.3 Result and Discussion. 95
4.2.4 Summary. 100
4.3 Self-Powered Tribo and Piezo Electric Nanogenerator using Snakeskin shed Membrane. 100
4.3.1 Materials and Methods. 103
4.3.2 Characterization. 104
4.3.3 Result and Discussion. 105
4.3.4 Summary. 110
4.4 Inkjet Printed Self Healable Strain Sensor Based on Graphene and Magnetic Iron Oxide. 111
4.4.1 Materials and Methods. 112
4.4.2 Characterization. 115
4.4.3 Result and Discussion. 115
4.4.4 Summary. 124
Chapter 5 Conclusions and Future Work. 125
5.1 Overview and General Conclusions. 125
5.2 Future Work. 127
Annex-A Journal Papers. 128
Annex-B to be Submitted Papers. 130
Annex-C Conference Papers. 131
Annex-D References. 132
Degree
Doctor
Publisher
제주대학교 대학원
Citation
Khan, Muhammad Umair. (2022). Smart Sensors and Neuromorphic Resistive Memory Devices for Intelligent Wearable Electronics.
Appears in Collections:
Faculty of Earth and Marine Convergence > Earth and Marine Science
Faculty of Earth and Marine Convergence > Ocean System
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